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| MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE CM800HA-34H q IC...................................................................800A q VCES ....................................................... 1700V q Insulated Type q 1-element in a pack APPLICATION Inverters, Converters, DC choppers, Induction heating, DC to DC converters. OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 130 114 570.25 570.25 4 - M8 NUTS C C C 1240.25 C C 20 CM E E 140 30 G E E E E C G CIRCUIT DIAGRAM 16.5 3 - M4 NUTS 2.5 18.5 61.5 18 6 - 7 MOUNTING HOLES 5 35 11 14.5 38 LABEL HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 31.5 28 5 MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE MAXIMUM RATINGS (Tj = 25C) Symbol VCES VGES IC ICM IE (Note 2) IEM (Note 2) PC (Note 3) Tj Tstg Viso -- -- Item Collector-emitter voltage Gate-emitter voltage Collector current Emitter current Maximum collector dissipation Junction temperature Storage temperature Isolation voltage Mounting torque Mass VGE = 0V VCE = 0V TC = 25C Pulse TC = 25C Pulse TC = 25C, IGBT part Conditions Ratings 1700 20 800 1600 800 1600 8300 -40 ~ +150 -40 ~ +125 4000 6.67 ~ 13.00 2.84 ~ 6.00 0.88 ~ 2.00 1.5 Unit V V A A A A W C C V N*m N*m N*m kg (Note 1) (Note 1) -- -- Charged part to base plate, rms, sinusoidal, AC 60Hz 1min. Main terminals screw M8 Mounting screw M6 Auxiliary terminals screw M4 Typical value ELECTRICAL CHARACTERISTICS (Tj = 25C) Symbol ICES VGE(th) IGES VCE(sat) Cies Coes Cres QG td (on) tr td (off) tf VEC (Note 2) trr (Note 2) Qrr (Note 2) Rth(j-c)Q Rth(j-c)R Rth(c-f) Note 1. 2. 3. 4. Item Collector cutoff current Gate-emitter threshold voltage Gate-leakage current Collector-emitter saturation voltage Input capacitance Output capacitance Reverse transfer capacitance Total gate charge Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Emitter-collector voltage Reverse recovery time Reverse recovery charge Thermal resistance Contact thermal resistance Conditions VCE = VCES, VGE = 0V IC = 80mA, VCE = 10V VGE = VGES, VCE = 0V Tj = 25C IC = 800A, VGE = 15V Tj = 125C VCE = 10V VGE = 0V VCC = 850V, IC = 800A, VGE = 15V VCC = 850V, IC = 800A VGE1 = VGE2 = 15V RG = 2.5 Resistive load switching operation IE = 800A, VGE = 0V IE = 800A die / dt = -1600A / s Junction to case, IGBT part Junction to case, FWDi part Case to fin, conductive grease applied Min -- 4.5 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- Limits Typ -- 5.5 -- 2.75 3.30 93 13.3 5.1 4.4 -- -- -- -- 2.40 -- 135 -- -- 0.012 Max 16 6.5 0.5 3.58 -- -- -- -- -- 1.20 1.50 2.00 0.60 3.12 2.00 -- 0.015 0.048 -- Unit mA V A V nF nF nF C s s s s V s C K/W K/W K/W (Note 4) Pulse width and repetition rate should be such that the device junction temp. (Tj) does not exceed Tjmax rating. IE, VEC, trr, Qrr & die/dt represent characteristics of the anti-parallel, emitter to collector free-wheel diode. Junction temperature (Tj) should not increase beyond 150C. Pulse width and repetition rate should be such as to cause negligible temperature rise. HVIGBT MODULES (High Voltage Insulated Gate Bipolar Transistor Modules) Feb. 2000 MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES OUTPUT CHARACTERISTICS (TYPICAL) 1600 Tj = 25C VGE = 12V VGE = 11V VGE = 13V VGE = 10V TRANSFER CHARACTERISTICS (TYPICAL) 1600 VCE = 10V COLLECTOR CURRENT IC (A) VGE = 14V VGE = 15V 1200 VGE = 20V COLLECTOR CURRENT IC (A) 1200 800 VGE = 9V 800 400 VGE = 8V VGE = 7V 400 Tj = 25C Tj = 125C 0 0 2 4 6 8 10 0 0 4 8 12 16 20 COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) GATE-EMITTER VOLTAGE VGE (V) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) COLLECTOR-EMITTER SATURATION VOLTAGE VCE(sat) (V) 5 VGE = 15V 10 Tj = 25C IC = 1600A 4 8 3 6 IC = 800A 2 4 1 Tj = 25C Tj = 125C 2 IC = 320A 0 0 400 800 1200 1600 0 0 4 8 12 16 20 COLLECTOR CURRENT IC (A) GATE-EMITTER VOLTAGE VGE (V) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) CAPACITANCE Cies, Coes, Cres (nF) EMITTER CURRENT IE (A) 104 7 5 3 2 103 7 5 3 2 Tj = 25C 103 7 VGE = 0V, Tj = 25C 5 Cies, Coes : f = 100kHz 3 Cres : f = 1MHz 2 102 7 5 3 2 Cies 102 7 5 3 2 101 101 7 5 3 2 Coes Cres 0 1 2 3 4 5 100 10-1 2 3 5 7 100 2 3 5 7 101 2 3 5 7 102 COLLECTOR-EMITTER VOLTAGE VCE (V) Feb. 2000 EMITTER-COLLECTOR VOLTAGE VEC (V) MITSUBISHI HVIGBT MODULES CM800HA-34H HVIGBT (High Voltage Insulated Gate Bipolar Transistor) Modules HIGH POWER SWITCHING USE INSULATED TYPE HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 5 REVERSE RECOVERY TIME trr (s) SWITCHING TIMES (s) VCC = 850V, VGE = 15V 3 RG = 2.5, Tj = 125C 2 Inductive load 100 7 5 3 2 10-1 7 5 td(off) td(on) tr tf 100 7 5 3 2 10-1 7 5 trr 103 7 5 3 2 102 7 5 Irr 5 7 102 23 5 7 103 23 5 5 7 102 23 5 7 103 23 5 COLLECTOR CURRENT IC (A) EMITTER CURRENT IE (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT part) TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (FWDi part) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) NORMALIZED TRANSIENT THERMAL IMPEDANCE Zth(j - c) 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.024C/ W 2 101 7 Single Pulse 5 TC = 25C 3 Rth(j - c) = 0.060C/ W 2 100 7 5 3 2 10-1 7 5 3 2 10-2 10-3 2 3 5 7 10-2 2 3 5 7 10-1 2 3 5 7 100 TIME (s) VGE - GATE CHARGE (TYPICAL) 20 GATE-EMITTER VOLTAGE VGE (V) VCC = 850V IC = 800A 16 12 8 4 0 0 2000 4000 6000 8000 10000 GATE CHARGE QG (nC) Feb. 2000 REVERSE RECOVERY CURRENT Irr (A) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 5 5 VCC = 850V, Tj = 125C 3 Inductive load 3 2 VGE = 15V, RG = 2.5 2 |
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